Selected Publications by Dr. Elcess

Elcess, K. The Effect of Strain and Orientation on In_xGa_1-xAs Layers Grown by Molecular Beam Epitaxy. Thesis (Ph. D.)—Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988.

Elcess, K., Liévin, J‐L., & Fonstad, C. G., “Growth of GaAs, AlGaAs, and InGaAs on (111) B GaAs by molecular‐beam epitaxy.” Journal of Vacuum Science & Technology B 6.2 (1988): 638-641.

Singer, R., Vlcek, J. C., Fonstad Jr, C. G., Anderson, K. K., Phillips, M. R., Haus, H. A., Frank, M., Towe, E. D., Brorson, S. D., Elcess, K., Laurich, B., McCombe, B. D., Mailhiot, C., Smith, D., Weinstein, B. A., Broekaert, T. P. E., Thompson, C. V., III, Lee, H. Q., Hryniewicz, J. V., Ceyer, S. T., Chin, A., & Meehan, K., Heterostructures for Optical Devices. Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT), 1988.

Laurich, B. K., Elcess, K., Fonstad, C. G., Beery, J. G., Mailhiot, C., & Smith, D. L., “Optical properties of (100)- and (111)-oriented GaInAs/GaAs strained-layer superlattices.” Physical Review Letters 62.6 (1989): 649.

Beery, J. G., Laurich, B. K., Maggiore, C. J., Smith, D. L., Elcess, K., Fonstad, C. G., & Mailhiot, C., “Growth and characterization of (111) oriented GaInAs/GaAs strained‐layer superlattices.” Applied Physics Letters, 54.3 (1989): 233-235.

Yoo, B. S., Liu, X. C., Petrou, A., Cheng, J. P., Reeder, A. A., McCombe, B. D., Elcess, K., & Fonstad, C., “Optical and infrared studies of [111] InGaAs/AlGaAs strained-layer superlattices.” Superlattices and Microstructures 5.3 (1989): 363-366.

Laurich, B. K., Smith, D. L., Elcess, K., Fonstad, C. G., & Mailhiot, C., “Study of the optical properties of (100) and (111) oriented GaInAs/GaAs strained-layer superlattices.” Superlattices and Microstructures 5.3 (1989): 341-344.

Herman, M. H., Pearah, P. J., Elcess, K., & Ward, I. D., “Comparative Optical Studies of Cu, Mn, and C Impurities in Bulk LEC-grown GaAs by Electron Beam Electroreflectance (EBER) and Photoluminescence (PL).” MRS Proceedings. Vol. 163. Cambridge University Press, 1989.

Moison, J. M., Elcess, K., Houzay, F., Marzin, J. Y., Gérard, J. M., Barthe, F., & Bensoussan, M., “Near-surface GaAs/Ga_0.7Al_0.3As quantum wells: interaction with the surface states.” Physical Review B 41.18 (1990): 12945.

Venkateswaran, U. D., Burnett, T., Cui, L. J., Li, M., Weinstein, B. A., Kim, H. M., Wie, C. R., Elcess, K., Fonstad, C. G., & Mailhiot, C., “Comparison and spatial profiling of strain in [001]- and [111]-oriented In_xGa_1-xAs/GaAs superlattices from Raman and x-ray experiments.” Physical Review B 42.5 (1990): 3100.

Venkateswaran, U. D., Cui, L. J., Li, M., Weinstein, B. A., Elcess, K., Fonstad, C. G., & Mailhiot, C., “Strain mapping in [111] and [001] InGaAs/GaAs superlattices.” Applied Physics Letters 56.3 (1990): 286-288.

Gell, M. A., Herman, M. H., Elcess, K., Ward, I. D., Gibbings, C. J., & Tuppen, C. G., “Evidence for new optical transitions in short-period Si/Ge superlattices from electron-beam electroreflectance measurements.” Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series. Vol. 1286 (1990): 320-328.

Ranganathan, R., Yoo, B. S., Wang, Y. J., McCombe, B. D., Lim, K. Y., Kuchar, F., Elcess, K., & Fonstad, C., “Cyclotron resonance in <111>-oriented InGaAs/AlGaAs strained layer superlattices.” Surface Science 228.1 (1990): 156-158.

Houzay, F., Moison, J. M., Elcess, K., & Barthe, F., “Modulation of the coupling of a near-surface GaAs/Ga_0.7Al_0.3As quantum well with its free surface.” Superlattices and Microstructures 9.4 (1991): 507-509.